40V n-channel devices added to MOSFET family

Two n-channel devices have been added to Toshiba Electronics Europe’s U-MOS IX-H family of high-efficiency, high-speed switching MOSFETs. The TK3R1E04PL and TK3R1A04PL are said to help designers improve performance and reduce power consumption in power supply applications such as DC/DC converters and the secondary side circuits of SMPS AC/DC power supplies.

The TK3R1E04PL (TO-220 package) and TK3R1A04PL (TO-220SIS package) have a maximum VDSS rating of 40V and can operate with gate-source voltages (VGSS) of ±20V. Respective maximum DC drain currents are 100A and 82A.

Both devices have a low typical on resistance (RDS(ON)) of 2.5mΩ (VGS=10V) and a typical output capacitance (COSS) of 1000pF. These characteristics ensure efficient on-state operation, rapid switching, and lower switching losses.

The TK3R1E04PL and TK3R1A04PL are claimed to support optimum performance and efficiency in power supply applications by providing a trade-off between resistance and capacitance. This includes synchronous rectification designs, where the low output charge (QOSS) reduces device contribution to rectification power loss.

The MOSFETs will operate with channel temperatures of up to 175°C, with the U-MOS IX-H technology ensuring stable operation over a range of temperatures and load conditions.

Peggy Lee