The series has been optimised to suit the bipolar voltages required for high-side and low-side IGBT, SiC and MOSFET gate drive applications, and the MGJ6 series is now available in SIP, DIP and a low profile surface mount package format.

The series comprises combinations of wide input voltages with nominals of 5, 12, or 24 VDCand + 15 / – 5, + 15 / – 10 or + 20 / – 5 VDC outputs. Suitable for low to medium power applications that require a DC link voltage up to 3 kVDC, the asymmetric outputs provide optimum drive levels to maintain a high system efficiency with low EMI levels. With its very low coupling capacitance, typically 15pF EMI coupling through the converter is reduced.

The MGJ6 series has a characterized dV/dt immunity of 80 kV/us minimum at 1.6 kV, and this contributes to a high degree of reliability in fast switching drive systems. The series also has characterized partial discharge performance, this being crucial to achieving a long service life in high performance applications.

Certification to safety standard UL60950 for reinforced insulation and the medical 3rd edition safety standard ANSI/AAMI ES60601-1 for 2 MOOPs and 2 MOPPs is currently pending.With a creepage and clearance of 8 mm, the MGJ6 will satisfy safety agency requirements for extra high working voltages.

Commenting Murata’s product marketing manager, Ann-Marie Bayliss said, “The MGJ6 series provides optimised voltages for power gate drives for the best overall system performance and efficiency. With characterized partial discharge performance, they are now available, in a choice of form factors ”

Short circuit and overload protection features are standard across the range and a frequency synchronization/enable input pin can simplify EMC filter design.