Dialog Semiconductor is demonstrating the DA8801, its first GaN power IC product, using TSMCs 650-V GaN-on-Si
process technology. The DA8801, together with the company’s patented digital
Rapid Charge power conversion
controllers, enable more efficient, smaller, and higher power density adapters
compared to traditional silicon FET based designs. It is initially targeting
the fast charging smartphone and computing adapter segment with its GaN
solutions.

 

cspo01_DialogSemi_DA8801_nov2016

 

 

See SmartGaN video from Dialog
Semiconductor

 

 

The entry by
Dialog into the wide band gap technology is significant because it’s a consumer
product, as opposed to high-end commercial products used by server farms or
telecom companies. It means that GaN designs are now competitive with Si-based
consumer designs. These GaN-based designs deliver much better efficiency in a
smaller area. GaN technology offers the world’s fastest transistors, which are
the core of high-frequency and ultra-efficient power conversion. Dialog’s
DA8801 half-bridge integrates building blocks, such as gate drives and level
shifting circuits, with 650 -V power switches to deliver a solution that
reduces power losses by up to 50 percent, with up to 94 percent power
efficiency. It allows a reduction in the size of power electronics by up to 50
percent, enabling a typical 45-W adapter design today to fit into a 25-W form
factor. This reduction in size will enable true universal chargers for mobile
devices. The product allows for a seamless implementation of GaN, avoiding
complex circuitry, needed to drive discrete GaN power switches. The
DA8801 will be available in sample quantities in Q4 2016. Find more information
at: http://www.dialog-semiconductor.com/products/DA8801