JEDEC tests were originally developed for silicon technology, but more aggressive testing is needed for GaN

BY KURT SMITH, Reliability Manager, and RONALD BARR, VP of Quality

reliability testing is an essential phase of any new product or technology.
Transphorm utilizes standard JEDEC qualification testing prior to
commercializing its GaN (gallium nitride) FETs to ensure that the quality of
the devices will meet customer expectations for reliability. However, since the
JEDEC tests were originally developed for silicon technology, Transphorm’s
testing has gone beyond the minimum requirements of JEDEC testing by running
tests on a much larger number of devices than the minimum required. In
addition, aggressive accelerated life testing was also performed.


testing typically uses relatively large numbers of devices and applies a fairly
modest level of stress to those devices. The tests are designed to give a lot
of information about infant mortality and a limited amount of information about
the constant failure rate portion of the well-known bathtub curve, but virtually
nothing about the wear-out failure portion. By passing this suite of tests,
Transphorm has demonstrated that its GaN products are free from any of the
typical defects that can have a negative impact on short-to-medium-term
reliability. Since JEDEC-type testing does not provide the required resolution
to be able to predict lifetime in the field, more aggressive accelerated life
testing becomes the methodology of choice.

switching operation test

normal operation, the devices were exposed to many of the JEDEC test conditions
simultaneously. The high-temperature operating life test (HTOL) mimics hard
switching conditions in applications and provides insight into possible
interactions affecting reliability. The tests used standard parts operating as
the main switch in a boost converter. The devices were run at a 175°C junction
temperature, which is higher than the 150°C reported in the datasheet. The
higher temperature provides a minor acceleration of the test, but higher
temperatures result in the degradation of external components, thereby limiting
the maximum junction temperature to 175°C.

Fig. 1 shows conversion loss of the devices over
the life of the HTOL. Degradation of the solder contacts and external
components in the circuit account for the increase in conversion loss after 2,000
hours; the devices showed no significant change in performance when measured
after the HTOL. While this test does not predict lifetime, the GaN devices are
robust for extended times at the maximum rated temperature in actual operating



1: Loss plot for HTOL of seven 600-V-rated GaN-on-Si FETs and a reference
device to 3,000 hours at Tj = 175°C.


is the predicted lifetime or point that the parts will begin to fail at an
increasing rate due to aging lifetime projections, which depend on understanding
and modeling the wear-out process and are based on accelerated testing to
failure. The operating conditions of a power switch allow for separation of the
major stress factors.

Fig. 2 shows failure times plotted on a graph of
log time versus 1/temperature in Kelvin (Arrhenius plot). Each set of devices
is represented by a mean time to failure (MTTF) point (triangle) or the point
at which 50% of the devices are failed. The slope of the line fitted to the
MTTF points provides the physical understanding of the degradation mechanism,
through the activation energy (Ea). In this testing, Ea is 1.84 eV, which is in good
agreement with the values reported in the literature. The line also predicts
the lifetime-at-use temperatures such as 423°K (150°C), which is >1 x 108 hours.


2: Arrhenius plot showing MTTFs for the three temperatures (in °K) and lifetime
extrapolation including 90% confidence limits.

statistical validity is demonstrated both by the range of the failure points
and by the 90% confidence limits shown by the dashed lines. The small range of
values around the MTTF point provides confidence that the expected failure mode
is being represented. The lower limit of that range is still >1 x 106 hours or
>100 years at 150°C.

first report of GaN high-field-related lifetime is >1 x 108 hours at 600
V. For the high-field lifetime testing, three sets of standard 600-V production
parts (GaN HEMTs cascoded with Si FETs) were biased in the off-state at high
drain voltages of 1,050, 1,100, and 1,150 V. Device temperature was set at 82°C
to match expected use conditions.

Fig. 3 shows a graph of the failure times versus
voltage for one possible failure model: linear voltage time-dependent
dielectric breakdown (TDDB). However, the reported prediction is based on a
reciprocal voltage TDDB model that represents the most conservative lifetime,
as shown in Fig. 4.
Similar to the Arrhenius plot of Fig. 2, the small range
of failure times around the MTTF points demonstrates the quality of the test.
The 95% confidence limits (dashed lines) give a strong support to the projected
lifetimes reported. The slope of the line provides the acceleration factor
needed to provide a physical understanding.


3. Log time versus 1/V plot of high-voltage OFF state (HVOS) testing using a
linear TDDB model for illustration of data integrity (projection may not
provide the device lifetime).

the plots above are useful for understanding the reasons behind the devices
failing, the use plots of Fig. 4 and Fig. 5 are more helpful in
understanding the process lifetime and reliability. In each plot, all devices
(including multiple sample sets) tested at accelerated conditions are projected
back to a use condition based on the physical parameters determined from the
plots above. The Weibull plot combines all of the devices into a single set and
allows a more detailed understanding of the variability of the process as well
as predicting device lifetime.


4. Use plot of all HTDC device failures at three different use temperatures.


5. Use plots based on voltage accelerated testing showing all failed devices
during HVOS testing for the reciprocal field TDDB model.



results in Fig. 5 are from high-field testing of sample
sets across three lots. High-field lifetime at 650 V (or 520 V, as shown) can
be directly taken from the plot, not only at 50% failures (>1 x 108 hours), but
also at low percentages such as 10% (~1 x 108 hours) or 1% (~1 x 107 hours). The
relatively steep slope of the multiple sample sets shows the small variability
of the process lot to lot as well as within a wafer. The 95% confidence limits
provide assurance that the projected lifetime for 1% failures is >1 x 106 hours.
Additionally, the first failures do not form a significant tail. The lack of a
tail indicates that the field-related FIT rate will remain low for the lifetime
of the devices.

to the field-related use plot, the temperature-related use plot of Fig. 4 shows median lifetime of >2 x 107 hours at the
peak-rated junction temperature of 175°C. The steep slope of the fitted line
and the narrow 95% confidence limits show the small variability of the process.
Device and test time availability contributed to limited sample sets, but the
robustness of the high temperature results and the 1.8-eV activation energy
that match reported values provide great confidence in the reliability of
Transphorm’s products.

GaN with confidence

testing and HTOL have demonstrated that the initial quality and robustness of
Transphorm’s process to qualify GaN is sufficient for user applications. The
projected mean lifetimes for both the on-state and off-state are greater than 1
x 107 hours
at nominal operating conditions, which exceeds known requirements. Since
Transphorm’s GaN products are produced using the same methods and materials as
silicon products, the reliability of GaN products should be indistinguishable
from the reliability of silicon products.