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Fairchild launches SuperFET III MOSFET family

Fairchild Semiconductor has introduced its SuperFET III family of 650V N-channel MOSFETs which are said to meet the higher power density, system efficiency and reliability requirements of the latest telecom, server, electric vehicle (EV) charger and solar products.

“SuperFET III MOSFETs help reduce BOM costs, shrink board space and simplify the product design,” said Jin Zhao, vice president and general manager of Fairchild’s High Power Industrial division.

The family combines reliability, low EMI, efficiency and thermal performance and its broad range of package options is claimed to give product designers greater flexibility, particularly with size constrained designs.

SuperFET III technology is said to have the lowest Rdson in any easy drive version of a Super Junction MOSFET. To achieve this, it features advanced charge balancing technology, which enables 44% lower Rdson than its SuperFET II predecessors in the same package size.

SuperFET III’s reliability is partly due to its body diode and single pulse Avalanche Energy (EAS) which is said to perform three times better than its closest competitor.

The lower peak drain-source voltage during turn off improves system reliability in low temperature operation because the breakdown voltage naturally drops by 5% at -25℃ junction temperature.

These reliability advantages are important for industrial applications such as solar inverters, Uninterruptable Power Supplies (UPS) and EV chargers, which must be capable of enduring higher or lower external ambient temperatures.

The SuperFET III MOSFET family is available in multiple package and parametric options.

Author
Peggy Lee