First TRENCHSTOP 1200 V IGBT6 discrete produced on 12 inch wafer

Infineon Technologies is launching a new 1200 V IGBT generation TRENCHSTOP IGBT6.

It is the first discrete IGBT duopack on the market manufactured on 12 inch wafer size.

The IGBT technology has been designed to meet customer requirements for high efficiency and high-power density. The product family has been optimised for use in hard switching and resonant topologies operating at switching frequencies from 15 kHz to 40 kHz. Typical applications for the IGBT6 are uninterruptible power supply (UPS), solar inverters, battery chargers, and energy storage.

The 1200 V TRENCHSTOP IGBT6 has been released in two families. The S6 series features the best trade-off between a low saturation voltage of V CE(sat) of 1.85 V and low switching losses. The H6 series is optimised for low switching losses.

Application tests have confirmed that the direct replacement of the predecessor Highspeed3 IGBT with the new IGBT6 S6 series translates into a 0.2 percent efficiency improvement. The positive temperature coefficient allows easy and reliable device paralleling. In addition, the R g controllability permits adjusting the switching speed of the IGBT to the requirements of the respective application.

The 1200 V TRENCHSTOP IGBT6 families are now in volume production. The product portfolio comprises 15A and 40A co-packed with a half- or full-rated freewheeling diode in a TO-247-3 package.

An industry leading current density for a discrete IGBT is delivered by the 75A variant co-packed with a 75 A freewheeling diode in TO-247PLUS 3pin or 4pin package.

Author
Neil Tyler