The NV6250 is
the industry’s first integrated half-bridge GaN power IC that features half-bridge circuits that are essential building
blocks in the power electronics industry. The devices are used in everything
from smartphone chargers and laptop adapters, to TVs, solar panels, data
centers and electric vehicles. The company’s proprietary AllGaN
half-bridge GaN Power IC with iDrive, monolithically integrates all the
functions required to deliver switching speeds of up to 2 MHz and enable a dramatic reduction in size, cost and
weight while delivering faster charging. The GaN-based power IC has switching
speeds that are 30x faster than silicon-based half-bridge components.





The first
half-bridge GaN Power IC is the 650 V-rated NV6250, in a 6 x 8mm QFN complete
with dual drivers, level shifter, dual 560 mΩ power FETs, bootstrap circuit and
extensive protection features. Simple, low-power digital PWM inputs switch the
half-bridge at all frequencies, with significant ease-of-use and layout
flexibility for the power system designer. The NV6250 is compatible with a wide
range of analog and digital controllers from multiple IC partners.


Samples and demonstration boards for
the NV6250 are available immediately to qualified customers, with production planned for Q2, 2017. Navitas will
demonstrate the NV6250 and other AllGaN GaN Power ICs in a private suite at the Applied Power Electronics Conference
March 26th – 30th,
2017 in Tampa, Florida. Please contact Navitas (+1 ThinkGaNIC (+1-844-654-2642)) to book a review.