The 60-V TPW1R306PL features an on
resistance of just 0.95mΩ (at VGS = 10 V) and is offered in a very
small form factor of 5 x 6mm. These U-MOS IX-H MOSFETs now offer an N-channel
device in a ‘DSOP Advance’ SMD package that offers double sided cooling. Maximum
drain current and power dissipation are 260 A and 170 W, respectively. The
enhanced thermal dissipation provided by the double-sided cooling will help to
reduce device count and save space in high-component-density applications. The
thermal resistance rating is  0.88 k/W to the
top side of the package.





Typical QOSS is just 77.5nC,
allowing designers to improve system performance and efficiency by raising
switching speeds and reducing switching losses. Target applications for this
latest MOSFET include dc/dc converters, secondary-side circuits of ac/dc power
supplies and motor drives in cordless home appliances and power tools. Toshiba Electronics Europe: