The 60-V TPW1R306PL features an on
resistance of just 0.95mΩ (at VGS = 10 V) and is offered in a very
small form factor of 5 x 6mm. These U-MOS IX-H MOSFETs now offer an N-channel
device in a ‘DSOP Advance’ SMD package that offers double sided cooling. Maximum
drain current and power dissipation are 260 A and 170 W, respectively. The
enhanced thermal dissipation provided by the double-sided cooling will help to
reduce device count and save space in high-component-density applications. The
thermal resistance rating is  0.88 k/W to the
top side of the package.

 

Toshiba_TPW1R306PL_feb2017

 

 

Typical QOSS is just 77.5nC,
allowing designers to improve system performance and efficiency by raising
switching speeds and reducing switching losses. Target applications for this
latest MOSFET include dc/dc converters, secondary-side circuits of ac/dc power
supplies and motor drives in cordless home appliances and power tools. Toshiba Electronics Europe: www.toshiba.semicon-storage.com