Highest power density for 650V IGBT in surface mounting D2PAK

Infineon Technologies has expanded its product portfolio of the thin-wafer technology TRENCHSTOP 5 IGBT.

The product family is now offering up to 40A 650V IGBT, co-packed with a full rated 40A diode in a surface mounting TO-263-3 also known as D2PAK. The TRENCHSTOP 5 IGBT in D2PAK package has been developed to meet the growing demand for higher power density in power devices for automated surface mounted assembly.

Typical applications requiring highest power density and efficiency are: solar inverters, uninterruptible power supply (UPS), battery charging, and energy storage.

Ultra-thin the TRENCHSTOP 5 technology allows higher power density in a smaller chip size. Infineon said that it is the first to fit a 40 A 650V IGBT together with a 40A diode in D2PAK housing and offers a higher rating than any other product on the market, with other co-packed solutions delivering only 75 percent of the power.

The high-power density of the new devices enables designers to upgrade existing designs, to develop new platforms with up to 25% higher power output or to reduce the quantity of power devices used in parallel and thus allowing more compact designs. The unique co-packed 40A in D2PAK can be considered as an alternative to D3PAK or TO-247 used for surface mounting. This supports easy soldering, leading to fast and reliable assembly.

The TRENCHSTOP 5 650V IGBTs in D2PAK have been released for high volume production. The product family comprises 15 A, 20 A, 30 A single IGBT and 15 A, 20 A, 30 A and 40 A IGBT co-packed with the same current freewheeling diode.

Author
Neil Tyler