By Alix Paultre, contributing editor

ON Semiconductor
announced the latest additions to its portfolio of Interline Transfer Electron
Multiplying CCD (IT‑EMCCD) image sensors, targeting extreme low-light
applications. The 8.8-megapixel KAE-08152 has a 4/3 optical format with an enhanced
pixel design that doubles quantum efficiency for near-infrared (NIR)
wavelengths, such as 850 nm over the previous KAE-08151, while being fully
drop-in-compatible, simplifying adoption.

In addition, all
devices in ON Semiconductor’s IT-EMCCD portfolio are now available with
packages that incorporate an integrated thermoelectric cooler. This option
addresses the increased effort and potentially higher costs that camera
manufacturers can incur when developing a cooled camera design to fully
maximize the performance of these devices.

IT- EMCCD devices combine two established
imaging technologies with a unique output structure to enable a new class of
low-noise, high-dynamic range imaging. Interline Transfer CCD provides
excellent image quality and uniformity with a highly efficient electronic
shutter, while EMCCD excels under low-light conditions. Combining these
technologies allows the low-noise architecture of EMCCD to be extended to
multi-megapixel resolutions, and an innovative output design allows both
standard CCD (normal-gain) and EMCCD (high-gain) outputs to be utilized for a
single image capture. Engineering-grade versions of the KAE-08152 and
evaluation kits are available.