InGaAs Avalanche Photodiode Features Low Dark Current

OSI Laser Diode Inc.
February 17, 2017

Tailored for light-level detection and/or signal transmission applications, the LAPD 3050 indium gallium arsenide (InGaAs) avalanche photodiode (APD) module features a 50-µm active area, low dark current, and low back reflection. Operating at speeds up to 2.5 GHz, spectral response ranges from 1,000 nm to 1650 nm at +25°C. Typical operational wavelength is 1550 nm. Housed in a hermetically sealed, three-pin coaxial package and coupled to a single-mode fiber pigtail, breakdown voltage is from 50V to 70V and operating and storage temperatures range from -40°C to +85°C. Peruse a datasheet at

OSI Laser Diode, Inc.
Edison, NJ


Company OSI Laser Diode Inc.
City Edison
Country United States (USA)
Phone 732-549-9001