LDMOS power transistor added to rugged family

The latest member of Ampleon’s family of rugged LDMOS power transistors, the BLF189XR, has been launched.

Designed specifically for use in high power amplifiers operating in the 10 to 500MHz, the device is suitable for a variety of broadcast and industrial applications, including plasma generators, medical scanners, particle accelerators, as well as industrial RF heating, drying and thawing. It is said to be capable of operating with a VSWR up to 65:1 and it is rated to deliver 1700W CW or 1900W pulsed.

The BLF189XR will be available in two variants. The BLF189XRB delivers 40% more output power than the current BLF188XR at 1900W pulsed and is aimed at applications working at frequencies up to 150MHz. The second product will be the BLF189XRA, which can deliver 20% more output power compared to the current BLF188XR at 1700W pulsed, and is optimised to operate across the entire band up to 500MHz.

Delivering the highest possible power and reducing the number of transistors required to build a high power output amplifier, the rugged BLF189XR is claimed to provide the best efficiency from the smallest package and offers the lowest cost per watt.

The BLF189XR is constructed in a SOT539A package. An optional earless flanged SOT539B package device is also available.

Peggy Lee