Next-generation superjunction power MOSFETs from Toshiba

Toshiba Electronics Europe has launched a series of next-generation 650V power MOSFETs that are intended for use in server power supplies in data centres, solar (PV) power conditioners, uninterruptible power systems (UPS) and other industrial applications.

The first device in the DTMOS VI series is the TK040N65Z, a 650V device that supports continuous drain currents (ID) up to 57A and 228A when pulsed (IDP). It offers an ultra-low drain-source on-resistance RDS(ON) of 0.04Ω (0.033Ω typ.) which reduces losses in power applications. The enhancement mode device is intended for use in modern high-speed power supplies, due to the reduced capacitance in the design.

Power supply efficiency has been improved as a result of reductions in the key performance index / figure-of-merit (FoM) – RDS(ON) x Qgd and it shows a 40% improvement in this important metric over the previous DTMOS IV-H device, which represents a significant gain in power supply efficiency in the region of 0.36% – as measured in a 2.5kW PFC circuit.

The device is housed in an industry-standard TO-247 package, ensuring compatibility with legacy designs as well as suitability for new projects.

The new device is already in production and shipments have begun.

Author
Neil Tyler