Transistor technology advancements meet the stringent requirements for macro base stations operating between 1805 and 2690 MHz

NXP
introduced its third generation of Airfast products which include four LDMOS
transistors for cellular macro base stations. The Airfast 3 technology meets
the stringent requirements of all current wireless standards with wide
instantaneous bandwidths to cover an entire cellular band using a single device.

The
products target the smart connected infrastructure, which will need smaller
designs and lower power consumption to handle the increased data capacity
needed for smart cities. This is competition to other RF power products, such
as the GaN-based transistors from Infineon and Wolfspeed, but this LDMOS
version will likely be less expensive (production pricing not released yet).

 

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Compared
to Airfast 2, this third generation delivers up to 4% greater efficiency (53% final-stage
efficiency and up to 50% lineup efficiency), a 20% improvement in thermal
performance, up to 90 MHz full-signal bandwidth, and space savings up to 30%. The
devices are the first Airfast products to be housed in air-cavity plastic
packages. They offer the needed RF performance with a lower thermal resistance
reducing overall system heat dissipation. They are currently sampling with
production expected starting in Q4 2016. Reference circuits for various frequencies
are available. NXP: www.nxp.com/Airfast.