ON Semiconductor expands imaging options for extreme low-light imaging

ON Semiconductor has announced an addition to its portfolio of Interline Transfer Electron Multiplying CCD (IT‑EMCCD) image sensors, designed to target extreme low-light applications like medical and scientific imaging, as well as commercial and military applications for high-end surveillance. 

The KAE-08152 shares the same 8.8 megapixel resolution and 4/3 optical format as the existing KAE-08151, but incorporates an enhanced pixel design that doubles Quantum Efficiency for near-infrared (NIR) wavelengths such as 850nm.

The KAE-08152 is fully drop-in compatible with the existing device, simplifying adoption for camera manufacturers.

All devices in ON Semi’s IT-EMCCD portfolio are also available with packages that incorporate an integrated thermoelectric cooler to address the increased effort and potentially higher costs that camera manufacturers can incur when developing a cooled camera design.

The Interline Transfer EMCCD devicescombine two ‘established’ imaging technologies – the EM and the CCD – with a ‘unique’ output structure to enable a new class of low-noise, high-dynamic range imaging.

The low-noise architecture of EMCCD is now able to extend to multi-megapixel resolutions, while the output design allows both standard CCD (normal-gain) and EMCCD (high-gain) outputs to be utilised for a single image capture – extending intrascene dynamic range and scene detection from sunlight to starlight in a single image.

Author
Bethan Grylls