The proprietary SOI technology enables the integration of RF, digital, and analog components on a single die

By Warren Miller, contributing writer

pSemi Corp.,
a Murata company specializing in semiconductor integration, recently announced
the availability of the PE561221, claimed as the industry’s first monolithic, silicon-on-insulator
(SOI) Wi-Fi front-end module (FEM). By providing a high-linearity signal and excellent
long-packet error vector magnitude (EVM) performance, the PE561221 one-chip
solution is well-suited for set-top boxes, routers, and Wi-Fi gateways.

The
2.4-GHz Wi-Fi FEM is built
on pSemi’s UltraCMOS platform, a proprietary advanced form of SOI technology.
SOI is an optimal application for integrating mixed-signal processing
functionality due to its inherent RF and microwave properties and allows the
integration of RF, digital, and analog components on a single die. When paired
with high-volume CMOS manufacturing, it delivers a reliable, repeatable
technology platform, said pSemi.

Leveraging
pSemi’s SOI technology and Murata’s expertise in Wi-Fi connectivity and
advanced packaging, the PE561221
integrates a low-noise amplifier (LNA), a power amplifier (PA), and two RF
switches (SP4T, SP3T) on a single die in a 16-pin, 2 × 2-mm LGA package for either standalone or in 4
× 4 MIMO and 8 × 8 MIMO modules.

“The
new IEEE 802.11ax standard is utilizing high-order modulation schemes (1,024
QAM) with demanding EVM requirements,” said Colin
Hunt, vice president of worldwide
sales for pSemi, in a statement. “Traditional process technologies struggle to
keep up with both performance and integration requirements, and only SOI can
offer the ideal combination of integration and high performance. This new
monolithic Wi-Fi module is a great example of the types of technology and
product advancements that pSemi and Murata can accomplish together.”

The
Wi-Fi FEM operates at 2.4 to 2.5 GHz. Over the operating temperature range of –40°C
to 85°C, the
FEM maintains performance and reliability, with less than 0.1 dB of gain droop.
At –40 dB EVM (MCS9), the FEM’s output power
is +19 dBm with less than 0.05 dB droop in power output after a 4-ms packet.

Volume-production parts and samples are
available now. Contact sales@psemi.com.