SiC MOSFETs, SiC SBDs, SiC Modules: Advanced Structures provide higher power density reliability, and greater energy efficiencies

Willich-Münchheide/Munich, November 8th, 2016 – At the world’s leading show for electronics, electronica in Munich (Nov. 8-11, 2016/Hall A5-Booth 542) ROHM Semiconductor presents its 3rd Gen of SiC MOSFETs, SiC Schottky Barrier Diodes (SBDs) and SiC modules. The new devices successfully address the needs of efficient power delivery and are key solutions to reduce loss issues during power conversion. ROHM, a pioneer in SiC development, was the first to successfully mass produce SiC MOSFETs in 2010 and continues to lead the industry in developing products that aim for further power loss reductions.
3rd Generation SiC MOSFETs
ROHM is now mass-producing the industry’s first trench-type SiC MOSFETs. ROHM’s new generation of SiC MOSFETs reduces ON-resistance by 50% across the entire temperature range and input capacitance by 35% in the same chip size compared with planar gate-type SiC MOSFETs. Optimum performance is achieved by combining exceedingly low loss with high-speed switching performance. This also makes it possible to reduce the size of peripheral components such as coils and capacitors by increasing switching frequency. As a result, conversion efficiency is improved, contributing to miniaturisation, weight reduction, and greater energy efficiencies. The new SCT3080KL 1200V SiC MOSFET series in a TO-247 package serves as a perfect example.
Portfolio of 3rd Gen SiC MOSFETs
Portfolio-of-3rd-Gen-SiC-MOSFETsIn addition, ROHM will offer AECQ qualified SiC MOSFET based on 2nd Gen planar series.
3rd Generation SiC Schottky Barrier Diodes (SBD)
The 3rd Gen of SiC Schottky Barrier Diodes (SBD) realise lowest forward voltage (VF) and lowest reverse leakage current (lR) over the entire temperature range among all of the SiC SBDs currently available on the market. In addition to this, they feature high surge current capability which is ideal for power supply applications. Adding to the recently announced TO220AC devices at 650V/6, 8 and 10A, ROHM introduces D2PAK and TO220FM devices also adding lower current options, 2A and 4A to the family.
SiC diodes exhibit ultra-short reverse recovery time compared with silicon-based devices which basically makes them ideal for high speed switching.
Overall, these features contribute to the ongoing trend of high efficiency, high power density and highly robust designs.
Portfolio of 3rd Gen SiC SBDs

Portfolio-of-3rd-Gen-SiC-SBDsChopper type Full SiC Modules
ROHM’s new full SiC modules including chopper type modules for converters integrate both, mass-produced Trench SiC MOSFETs and SiC SBDs. In addition to 2 in 1 type modules, 1200V/120A,180A and 300A Chopper type modules are being prepared for fulfillment of market requirements. In addition to this, ROHM is working on new power module which is having lower stray inductance.
Portfolio of SiC Modules

Portfolio-of-SiC-Modules

 

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