DURHAM, N.C., December 14, 2010:– Targeting the latest data center power supply design requirements, Cree Inc., a market leader in silicon carbide power devices, announced its new line of Z-Rec™ 650V SIC Junction Barrier Schottky (JBS) diodes. The new JBS diodes provide blocking voltage to 650V to accommodate recent changes in data center power architecture that industry consultants estimate will result in energy efficiency gains of up to 5 percent. Because data centers account for nearly 10 percent of the world’s annual consumption of electrical power, any efficiency gain represents a significant opportunity to reduce overall power consumption.

Recent trends in data center power architecture call for the elimination of the 480V to 208V conversion to boost overall data center efficiency. Instead of providing 120V AC from the 3 phase/208V line to neutral, server power supplies will now be expected to accept a broader universal line voltage range of 90V – 305V (277V plus a 10 percent guard band) directly from the 3 phase/480V line to neutral. This architecture eliminates the need for the step-down power transformer, along with the related energy losses and expense.

Optimal operation of server power supplies with a higher input voltage range of 90V – 305V requires power components such as Schottky diodes that have an extended maximum blocking voltage of 650V. Cree’s new 650V-rated devices provide an ideal solution for designers of state of the art power supplies for data center servers and communications equipment. Cree’s new Z-Rec silicon carbide diodes not only feature the 650V blocking voltage needed for these advanced power supplies, but they also further reduce energy losses, as compared to silicon devices, by eliminating reverse recovery losses.

The initial products in the 650V Z-Rec Schottky diode family, the C3DXX065A Series, include 4, 6, 8, and 10 amp versions in TO-220-2 packages. All devices are rated for operation from -55°C to +175°C.

For samples and more information, visit www.cree.com/power.