Step Recovery Diodes Feature Low Snap Time And Capacitance


SemiGen
November 10, 2016

SemiGen’s latest step recovery diodes (SRDs) employ controlled grown junction epitaxial silicon combined with a silicon dioxide passivation to ensure greater stability and reliability. The components offer a low snap time through voltages ranging from 8 Vdc to 120 Vdc. Capacitances at 6 Vdc range from 0.2 pF to 3 pF. The SRDs are suitable for signal-generation applications including pulse generators and parametric amplifiers. A datasheet is available at http://www.semigen.net/Step-Recovery-Diodes

SemiGen
Manchester, NH
603-624-8311
http://www.semigen.net
 


CONTACT INFO

Company SemiGen
Country United States (USA)