New Toshiba MOSFETs target server power supplies in data centers, PV power conditioners, uninterruptible power systems and other industrial applications.

By Gina Roos, editor-in-chief

Toshiba
Electronic Devices & Storage Corporation
 has expanded its MOSFET
family
with a new series of 650-V power MOSFETs,
aimed at server power supplies in data centers, solar (PV) power conditioners,
uninterruptible power systems (UPS) and other industrial applications.

The 650-V
TK040N65Z
, the first
device in the DTMOS VI series, supports continuous drain currents (ID) up to 57
A and 228 A when pulsed (IDP). A key feature is an ultra-low drain-source
on-resistance RDS(ON) of 0.04 Ω (0.033 Ω typ.) which reduces losses in
power applications. “The enhancement mode device is ideal for use in modern
high-speed power supplies, due to the reduced capacitance in the design,” said
Toshiba.

 

Power supply efficiency is improved thanks
to reductions in the key performance index/figure-of-merit (FoM) –
RDS(ON) x Qgd, showing a 40 percent improvement in this metric over the
previous DTMOS IV-H device. Toshiba said this represents a significant gain in
power supply efficiency in the region of 0.36% [1] – as measured in a 2.5 kW
PFC circuit.

Available in an industry-standard
TO-247 package, the TK040N65Z is in mass production. The device can be purchased
online
through Toshiba’s distribution
network.

Note: [1] As of June 2018, values
measured by Toshiba (2.5kW PFC circuit @ output power=2.5kW).