Toshiba introduces TVS diodes suited to high-speed interfaces

Toshiba Electronics Europe has released new ESD protection diodes based on its 4th generation ESD diode array process (EAP-IV), which uses the company’s proprietary snapback technology.

The rapid growth of data traffic whether driven by smartphones, wearables and applications such as virtual reality and the Internet of Things (IoT) is leading to increased numbers of high-speed interfaces that typically require protection against ESD events.

Theses protection diodes – DF2B5M4SL, DF2B6M4SL, DF10G5M4N and DF10G6M4N – offer protection for high-speed interfaces including USB 3.1 applications and offer a choice of operating voltages (3.6V and 5.5V) and packages (SOD962 and DFN10) providing flexible options to provide ESD protection in a variety of designs.

These four devices are able to deliver low capacitance, low dynamic resistance and high ESD endurance. Minimum signal distortion of high-speed data signals is guaranteed by the ultra-low capacitance of 0.2pF, while a typical dynamic resistance of RDYN=0.5Ω ensures low clamping voltages. High ESD protection levels are supported as electrostatic discharge voltages of at least ±20kV according to IEC61000-4-2 are guaranteed.

The DF2BxM4SL devices are suitable for mounting on high component density PCBs as the SOD-962 package requires a footprint of only 0.62 x 0.32mm and can be placed close to ICs that need ESD protection.

In the case of the DF10GxM4N types, the DFN10 package can be simply placed on top of a 4bit bus line. This flow-through design supports simple bus routing on the PCB as no additional stubs are needed to connect single TVS diodes.

Neil Tyler